University of Houston ELET 2305 Quizzes ch7-12 2.

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Test Item File412 Electronic Devices and Circuit Theory, 9e (Boylestad) Chapter 1: Semiconductor Diodes 1) An intrinsic semiconductor is one that is as pure as present-day technology can make it. ... 2) Electrons are the minority carriers in an n-type material. 3) Holes are the majority carriers in a p-type material. 4) The quantum-Volt (qV) is the unit of measurement for electron energy. 5) A free electron has a higher energy state than any that are bound to their nucleus. 6) Si and Ge both have negative temperature coefficients. 7) The amount of energy that is converted to heat at a silicon p-n junction can be a significant design consideration. 8) A normalized value has a reference magnitude of one. 9) The reverse breakdown voltage of an LED is typically less than 12 V. 10) The amount of photon energy emitted at the p-n junction of a silicon diode is negligible. 11) The characteristic of an ideal diode are those of a switch that can conduct current ________. A) in both directions B) in one direction only C) in both directions but in only one direction at a time D) depends on the circuit it is used in 12) When a diode is doped with either a pentavalent or a trivalent impurity its resistance will ________. A) increase B) decrease C) make the resistance stable against variation due to temperature D) None of the above 13) To make a p-type of semiconductor material you need a doping material that is ________. A) pentavalent B) tetravalent C) trivalent D) hexavalent 14) The direction of the arrow in the diode symbol points in the direction of ________. A) positive terminal under forward bias B) from n-type of semiconductor to p-type semiconductor material C) from p-type of semiconductor to n-type semiconductor material D) leakage current flow413 15) The reverse saturation current of a diode will just about ________ for every 10°C rise in the diode temperature. A) double B) half C) increase proportionately with temperature D) decrease proportionately with temperature 16) Increasing the temperature of a forward-biased diode ________. A) causes forward current to increase B) causes forward current to decrease C) has no significant effect on the forward current D) None of these 17) The DC or the static resistance of the diode is given by ________. A) RD = D VID B) RD = D D VV VI C) RD = D1 D2 D1 D2 V V I I   D) All of the above can be used. 18) The piecewise linear model, equivalent circuit of the diode consists of ________. A) a junction capacitor, a battery, a small resistor, and the ideal diode B) a battery, a small resistor, and the ideal diode C) a battery and the ideal diode D) the ideal diode 19) Some of the modern ohmmeters have a diode test setting. If you do not have one of these ohmmeters then to test the diode you need to check its resistance in the forward and the reverse direction. These resistances should be ________. A) relatively high in the forward direction and relatively low in the reverse direction B) relatively low in the forward direction and relatively low in the reverse direction C) relatively low in the forward direction and relatively high in the reverse direction D) relatively high in the forward direction and relatively high in the reverse direction 20) In the Zener region the current ________ and the voltage across the diode ________. A) is almost constant; can increase a lot B) is almost constant; is almost constant C) can increase a lot; is almost constant D) can increase a lot; can increase a lot 21) Suppose that a particular Zener diode has a temperature coefficient of 0.00575. If the temperature of this Zener diode increases by 50° C, what is the change in Vz? A) 50 × 0.00575 = 0.2875 B) 5 × 0.00575 = 0.02875 C) 10 × 0.00575 = 0.0575 D) Cannot tell without looking at the circuit in which the Zener is used414 22) An LED produces visible light when ________. A) the electrons and the holes combine with each other B) an electron enters the diffusion region C) a hole enters the diffusion region D) the electrons and the holes combine in the diffusion region 23) Light-emitting diodes emit light when the p-n junction is ________. A) forward-biased B) reverse-biased C) zero biased D) operating in the Zener region 24) As semiconductor devices have become ________ one of the primary purposes of the container is simply to provide a means for physical handling. A) larger B) widely used C) miniaturized D) more powerful 25) An advantage of the miniaturization of electronic devices is that they ________. A) improve reliability B) reduce cost C) increase speed D) increase availability 26) The characteristics of an ideal diode are those of a switch that can conduct current in ________. A) both directions B) only one direction C) the reverse bias direction D) None of the above 27) The ________ diode is a short circuit for the region of conduction and it is an open circuit in the region of nonconduction. A) ideal B) typical C) power D) small-signal 28) The ideal diode symbol has an arrow that points in the direction of ________. A) the leakage current flow B) the forward current flow C) positive terminal under forward bias D) All of the above 29) The term ________ is applied to any material that supports a generous flow of charge when a voltage source of limited magnitude is applied across its terminals. A) conductor B) insulator C) semiconductor D) dielectric415 30) The term ________ is applied to a material that offers a very low level of conductivity under pressure from an applied voltage. A) conductor B) insulator C) semiconductor D) ionic 31) The term _____ [Show More]

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